Modeling of AlGaN/GaN High Electron Mobility Transistors

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This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-bas...

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This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-bas...

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  • Formats: pdf
  • ISBN: 9789819775064
  • Publication Date: 23 Dec 2024
  • Publisher: Springer Nature Singapore
  • Product language: English
  • Drm Setting: DRM