Variation-Aware Advanced CMOS Devices and SRAM

Available
0
StarStarStarStarStar
0Reviews

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places empha...

Read more
product_type_E-book
pdf
Price
44.99 £

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places empha...

Read more
Follow the Author

Options

  • Formats: pdf
  • ISBN: 9789401775977
  • Publication Date: 6 Jun 2016
  • Publisher: Springer Netherlands
  • Product language: English
  • Drm Setting: DRM