The main theme of the book is the intimate connection between the two families of exactly solvable models: the inverse-square exchange (ISE) and the nearest-neighbor exchange (NNE) models.
The main purpose of this book is to provide an overview of all phenomena which can be categorized under the general label of "e;electron scattering"e;, and to give a comprehensive description of all spectroscopical techniques related to electron scattering phenomena.
In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics.
The dielectric microstructures act as ultrahigh Q factors optical cavities, which modify the spontaneous emission rates and alter the spatial distributions of the input and output radiation.
This book deals with the phenomenological theory of first-order structural phase transitions, with a special emphasis on reconstructive transformations in which a group-subgroup relationship between the symmetries of the phases is absent.
The aim of the book is to describe some of the recent advances, through computer simulation in a broad sense, in the understanding of the complex processes occurring in solids and liquids.
This series of books covers all areas of computational physics, collecting together reviews where a newcomer can learn about the state of the art regarding methods and results.
This book covers a new niche in circular accelerator design, motivated by the promising industrial prospects of recent micromanufacturing methods - X-ray lithography, synchrotron radiation-based micromachining and microanalysis techniques.
This volume attempts to fill the gap between standard introductions to solid state physics, and textbooks which give a sophisticated treatment of strongly correlated systems.
This book presents a selection of papers, written by Nicolaas Bloembergen and his associates during the years 1946-1962, on the subjects of nuclear magnetic relaxation, paramagnetic relaxation and masers, and magnetic resonance spectroscopy of solids.
Each year a large number of first rate articles on the physics and technology of semiconductor devices, written by Soviet experts in the field, are published.
Modern Semiconductor Quantum Physics has the following constituents: (1) energy band theory: pseudopotential method (empirical and ab initio); density functional theory; quasi-particles; LCAO method; k.
Due to the recent discovery of the room-temperature visible light emission from porous silicon (P-Si), a great interest in P-Si and related materials has arisen in the last decade of the 20th century.
In this volume, topics are drawn from field theory, especially gauge field theory, as applied to particle, condensed matter and gravitational physics, and concern a variety of interesting subjects.
This book aims to describe in simple terms the new area of statistical mechanics known as spin-glasses, encompassing systems in which quenched disorder is the dominant factor.
This book discusses the theory of the electron states of transition metal impurities in semiconductors in connection with the general theory of isoelectronic impurities.
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors.
This book discusses recent developments in electroluminescent (EL) displays, in particular thin-film EL displays, which are all-solid emissive displays with fast response, wide viewing angle, high resolution, wide operating temperature ranges and good display qualities.
This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials.
This volume contains very carefully compiled material presenting bibliographic descriptions of approximately 3500 papers, with a computer-generated index on authors, subject headings, corporate addresses and journals.
This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers.
This volume presents the growth of macrostructures in first-order nonequilibrium phase transitions in physical, chemical and biological multicomponent systems.
This volume contains 19 review articles, written by leading experts in the field of neutron scattering, NMR, dielectric spectroscopy, ferroelectricity, liquid crystal polymers as well as related subjects.
Designed both for experimentalists who study rough surfaces and the dynamics of thin film growth using diffraction techniques and for theorists who wish to learn of such rough surfaces and dynamic behavior in Fourier space, this monograph quickly brings the readers to forefront research in the area of the dynamics of interface growth.
This volume contains the collected works of the eminent chemist and physicist Lars Onsager, one of the most influential scientists of the 20th Century.
This book, a collection of works by leading figures in the field, is devoted to the latest developments of modern magnetism including micromagnetism, nanomagnetic materials, magnetic multilayers, macroscopic quantum magnetism, rare-earth intermetallic compounds, giant magnetoresistance, and their applications.
This new book by M Levinshtein and G Simin tells the readers about the design and work of the most important and most interesting semiconductor devices - the transistors.
This book gives a systematic overview on the scientific fundamentals of crystal growth from the classical phenomenological description to the recent theoretical contributions of statistical physics such as studies on surface roughening and on the pattern formation in the diffusion-limited growth.
This book discusses some of the most important emerging optoelectronic technologies foreseen to have major technical and business impact in the future.
Topological quantum numbers are distinguished from quantum numbers based on symmetry because they are insensitive to the imperfections of the systems in which they are observed.
