Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics.
The monograph reflects the current standard of knowledge about the open questions considered, taking care to collect and collate all the revelant ideas, facts and formulae which have been until now widely scattered throughout the literature.
This book brings together detailed discussions by leading experts on the various innovative aspects of thin films growth, deposition and characterization techniques, and new thin film materials and devices.
In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics.
Each year a large number of first rate articles on the physics and technology of semiconductor devices, written by Soviet experts in the field, are published.
Modern Semiconductor Quantum Physics has the following constituents: (1) energy band theory: pseudopotential method (empirical and ab initio); density functional theory; quasi-particles; LCAO method; k.
This book is concerned with compound semiconductor bulk materials and has been written for students, researchers and engineers in material science and device fabrication.
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors.
This book discusses recent developments in electroluminescent (EL) displays, in particular thin-film EL displays, which are all-solid emissive displays with fast response, wide viewing angle, high resolution, wide operating temperature ranges and good display qualities.
This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials.
This new book by M Levinshtein and G Simin tells the readers about the design and work of the most important and most interesting semiconductor devices - the transistors.
This volume includes highlights of the theories and experimental findings that underlie essential phenomena occurring in quantum-based devices and systems as well as the principles of operation of selected novel quantum-based electronic devices and systems.
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides.
Foreword by Charles H TownesThis volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers.
The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers.
This volume contains papers on the following: CMOS devices and devices based on compound semiconductors; processing; silicon integrated technology and integrated circuit design; quantum physics; nanotechnology; nanodevices, sensors and microsystems.
This book describes the elementary concepts of superconductivity and discusses the topics of flux-lattice melting, magnetization including the para-Meissner effect, microwave absorption, a.
Improve your circuit-design potential with this expert guide to the devices and technology used in mixed analog-digital VLSI chips for such high-volume applications as hard-disk drives, wireless telephones, and consumer electronics.
The realizations of physical systems whose quantum states can be directly manipulated have been pursued for experiments on fundamental problems in quantum mechanics and implementations of quantum information devices.
This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception.
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits.
The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains.
This comprehensive volume covers the latest research on high magnetic fields in semiconductor physics presented at the 16th International Conference (SemiMag 16), held in Tallahassee, Florida, August 2-8, 2004.
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used.
This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices.
This proceedings volume presents invited reviews and original short notes of recent results obtained in studies concerning the fabrication and application of nanostructures, which hold great promise for the new generation of electronic and optoelectronic devices.
This is the first monograph that strives to give a complete and detailed description of the collective modes (CMs) in unconventional superfluids and superconductors (UCSF&SC).
